特長
● Top illumination planar APD
● High operation frequency, High multiplication gain
● Laser range finder,Laser alarming, RADAR, etc. application.
電気・光学特性（E/O特性）
The opto-eletronic characteritics (@Tc=22±3℃)
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | — | 400～1100 | nm |
Active diameter | φ | — | 1800 | μm |
Reponsivity | Re | λ=905nm,φe=1μw, M=100 | 50 | 55 |
| A/W |
Response time | Ts | f=1MHz,RL=50Ω,λ=905nm |
| 1.0 |
| ns |
Dark current | ID | M=100 |
| 3.0 | 8.0 | nA |
Total capacitance | Ctot | M=100,f=1MHz |
| 8.0 |
| pF |
Reverse breakdown voltage | VBR | IR=10uA | 120 |
| 220 | V |
Operating voltage temperature coefficient | δ | Tc=-40℃～85℃ |
| 1.1 |
| V/℃ |
The absolute values
Operating voltage | 0.95×VBR | Operating temperature | -50～85℃ | Power dissipation | 1mW |
Forward current | 1mA | storage temperature | -55～100℃ | Soldering temperature(time) | 260℃(10s) |
The typical characteristical curve
Figure1. Responsivity vs. Wavelength at 0v
Figure2. Gain vs. UR/UBR
Figure3. Dark Current vs. UR/UBR
Figure4. Capacitance vs. Operating voltage
The application electric circuit
Figure5. Equivalent Circuit Diagram
Figure6. optical Drawing
Note ：
C1 - filter capacitor, mainly to filter out the noise of the bias working voltage VR;
C2 - bypass capacitor, mainly to provide a ground loop for the AC signal;
R1 - current limiting resistor, mainly to protect the detector from being damaged when the bias working voltage VR is too high;
Ri-sampling resistor, which converts the photocurrent into a voltage signal.
