1

RF Vπ @ 1kHz

Vpi_RF

-

3.3

3.5

V

2

RF Vπ @ 1GHz

Vpi_RF

-

-

4

V

3

Electro-optical 3-dB   Bandwidth*

BW

20/40

_-

_-

GHz

4

Electrical return loss (f<40GHz)

S11

_-

_-

-10

dB

5

Characteristic impedance

Zc

-

50

-

Ohm

6

Heater resistance

Rhtr

160

-

260

Ohm

7

DC tuning Pπ

Pπ_DC

45

55

70

mW

8

LD operating current

If

_-

300

400

mA

9

LD Forward Voltage

Vr

1.2

_-

2

V

10

Relative Intensity Noise+

RIN

-

-150

-

dB/Hz

11

Thermistor resistance

Rth

9.5

10

10.5

KΩ

12

TEC Current

Itec

-

-

0.5

A

13

TEC Voltage

Vtec

-

-

5.0

V

1

Output power   (If=400mA)

OP

12

13

_-

dBm

2

DC Extinction ratio

ER

20

_-

_-

dB

3

Wavelength range

λ

1535

1550

1565

nm

4

MPD1 responsivity+

R

0.01

_-

0.5

A/w

5

MPD2 Photocurrent   (If=400mA)

Iph2

0.1

_-

_-

mA

1

Storage temperature

ST

-40

85

°C

2

Operation   temperature*

OT

-40

70

°C

3

RF input power

EPin

-

25

dBm

4

Heater maximum power

HPin

_-

200

mW

5

Maximum laser   current

lop

_-

400

mA

RF

RF input port

Male GPPO connector, 50Ω characteristic impedance

1

TEC +

Thermoelectric Cooler Anode

2

TEC-

Thermoelectric Cooler Cathode

3

LD+

Laser Diode Anode

4

MPD2+

Monitor PDAnode(LD)

5

LD-

Laser Diode Cathode

6

TH+

Thermistor Anode

7

TH-,MPD2-

Thermistor Cathode , Monitor PD Cathode(LD)

8

Heater2+

Heater applied on #2 arm of the two MZM arms to introduce   phase shift.

9

Heater1+

Heater applied on #1 arm of the two MZM arms to introduce   phase shift.

10

Heater-

Heater GND for both Heater1 and Heater2.

11

MPD1-

Monitor PD Cathode(output)

12

MPD1+

Monitor PDAnode(output)