LPWBHT-BT10-G High-Temperature Geiger-Mode InGaAs/InP Single-Photon Avalanche Diode (SPAD) is a high-performance optoelectronic device specially designed for single-photon detection and counting in the near-infrared band. It is developed based on an InGaAs/InP heterojunction semiconductor material system and is specially optimized for single-photon detection scenarios over a wide temperature range of 0 °C and above. Under the premise of reducing cooling power consumption and system complexity, it achieves high-efficiency and low-dark-count single-photon signal acquisition, and can meet the stringent technical requirements of high-end fields such as quantum key distribution and weak-light detection.

The device provides a spectral response range covering the 900–1700 nm near-infrared band, offering ultra-high detection sensitivity at the single-photon level. At the same time, the optimized high-temperature-stable design ensures performance consistency over a wide operating temperature range. This not only meets the requirements for compact equipment integration, but also supports long-term stable operation under complex conditions such as outdoor base stations and industrial control environments.