仕様
Characteristic parameters | Sign | Test conditions | Min. | Typ. | Max. | Unit |
Detector Specifications and Configuration Parameters |
Effective pixel diameter | d | — | — | 25 | — | μm |
Operating wavelength | λ | — | 1000 | — | 1650 | nm |
Output signal amplitude | Vout |
| 2.5 | 3.3 | 5.0 | V |
Power consumption | PDC | VIN =12.0V，Tth=-30℃±5℃ | — | 15.0 | — | W |
Input voltage | VIN | — | — | 12 | — | V |
Input current | IIN | VIN =12.0V，Tth=-30℃±5℃ |
| 1.5 | — | A |
Operating ambient temperature | TA | — | -40 | — | 55 | ℃ |
Weight | Wt | — | — | — | 300 | g |
Detector size | SC | — | 89 ×62 ×30 | mm |
Performance Parameter |
Photon Detection Efficiency | PDE | TA=25±5℃，Tth=-30℃±5℃， τ=0.8 μs±0.1 μs，λ=1550±50nm(InGaAs)，λ=1064±10nm(InGaAsP) | 10 | 15 | — | % |
Dark Count Rate (InGaAs) | DCR(PDE=10%) | — | — | 10 | kHz |
Dark Count Rate (InGaAsP) | DCR(PDE=10%) | — | — | 5 | kHz
|
After pulse Probability | APP(PDE=10%) |
| — | — | 20 | % |
Tth: InGaAs avalanche photodiode chip operating temperature. τ: Dead time. Ambient temperature for the above parameter tests: TA = 25 ± 5℃. |
Parameter Setting Range and Recommended Operating Conditions
No. | Parameters | Rated Values |
Parameter Setting Range
| 1 | Detector operating temperature | -30℃~30℃, minimum step value: 0.1℃ |
| 2 | Dead time adjustment | 0.1μs～2.0μs, step value: 0.025μs |
| 3 | Avalanche voltage threshold adjustment | 50.0V～85.0V, step value: 0.1V |
| 4 | Geiger avalanche comparison voltage setting | 0.35V～1.10V, step value: 0.01V |
| 5 | Detector operating gate width and operating cycle adjustment | Operating gate width: ≥0.1μs; operating cycle: ＞0.1μs; step value: 0.01μs |
No. | Parameters | Rated Values |
Recommended Operating Conditions | 1 | Detector operating temperature | -30℃~0℃ |
| 2 | Dead time value | 0.80μs |
| 3 | Avalanche voltage threshold adjustment | See the test report for details |
| 4 | Geiger avalanche comparison voltage setting | 0.45V～0.90V |
Typical Characteristic Curves
Figure 1 InGaAs Spectral Response Characteristic Curve
Figure 2 InGaAsP Spectral Response Characteristic Curve
Quality Reliability Assurance
Implement the relevant requirements of GJB8121-2013 "General Specifications for Semiconductor Optoelectronic Assemblies"
寸法およびピン定義
Outline, Dimensions and Definition of Lead-out Ports (Unit: mm)
Outline dimension parameters
Figure 3 Outline Dimension Drawing
Definition of Lead-out Ports
Figure 4 Arrangement and Numbering of Electrical Connectors
Electrical Connector Number | Electrical Connector Type | Function |
1 | SSA-K | Synchronous signal output port |
2 | J30J-9TJW-J | Power supply and UART port |
3 | SMA-K | Avalanche signal output port |
The numbering of each port of J30J-9TJW-J is shown in Figure 5.
Figure 6 Port Numbering and Positions of J30J-9TJW-J (Bottom View)
Port No. | Sign | Function | Port No. | Name | Function |
1 | UART_TX | UART output port | 6 | GND | Ground Port |
2 | UART_RX | UART input port | 7 | GND | Ground Port |
3 | GND | UART ground port | 8 | POWER_12.0V | Positive input port |
4 | GND | Ground Port | 9 | POWER_12.0V | Positive input port |
5 | GND | Ground Port | — | — | — |
Notes
(1) Before power supply, carefully check whether the voltage of the power supply meets the requirements;
(2) Pay attention to electrostatic protection when using in a dry environment;
(3) The recommended operating ambient temperature should not exceed 40℃;
(4) Be careful not to use excessive force when plugging or unplugging interfaces;
(5) Pay attention to the sequence of switching on the power supply and setting parameters;
(6) Good heat dissipation must be ensured during use.
