特長
● InGaAs detector, with a sensitivity range of 800nm~1700nm, is commonly used for near-infrared light measurement;
● Avalanche Photodetector （APD）: 800~1700nm, InGaAs, Adjustable GAIN;
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion;
● Wide dynamic range, suitable for various photoelectric development scenarios, widely used;
● Excellent performance, high cost performance, all-round technical support;
● Provide non-standard customized services.
仕様
Specification
PN# | APDI-0.8/1.7um-1mm-AG8 | APDI-0.8/1.7um-0.5mm-AG8 | APDI-0.8/1.7um-0.2mm-AG8 | APDI-0.8/1.7um-0.1mm-AG8 | APDI-0.8/1.7um-0.08mm-AG8 | APDI-0.8/1.7um-0.05mm-AG8 |
Photosensitive range | 800～ 1700nm |
Photosensitive size | φ1.0mm | Φ0.5mm | Φ0.2mm | Φ0.1mm | Φ0.08mm | Φ0.05mm |
APD bias voltage adjustment range | 0 ~ 55 V | 0 ~ 55 V | 0 ~ 55 V | 0 ~ 55 V | 0 ~ 55 V | 0 ~ 55 V |
APD gain M | 0 ~ 30 | 0 ~ 30 | 0 ~ 30 | 0 ~ 30 | 0 ~ 30 | 0 ~ 30 |
Response time constant | 5 ns | 1 ns | 300 ps | 200 ps | 300 ps | 150 ps |
Bandwidth range | DC~12MHZ |
Gain range | Hi-Z load: 1.51kV/A~4.75MV/A; 50Ω load: 0.75kV/A~2.38 MV/A |
Signal amplitude | Hi-Z load: 0～10V; 50Ω load: 0～5V |
Gain adjustment method | 1: Rotary gear adjustment: 0~70dB, 10dB per gear, 8 gears in total; 2: Single-turn potentiometer adjusts the APD's own gain; the bandwidth is inversely proportional to the gain. |
Photosensitive surface depth | 0.05" (1.2 mm) |
Detector net weight | 0.11kg |
Operating temperature | 10～40℃ |
Storage temperature | -20～ 70℃ |
Appearance size | 2.78" X 2.21" X 1.20" (70.6 mm X 56.2 mm X 30.5 mm) |
NEP | 2.67~71.7 pW/Hz1/2 |
Power supply interface | Power switch | Signal interface | Gain adjustment | Support rod interface | Optical interface |
LUMBERG RSMV3 FEMALE | Slide switch with LED indicator | BNC female socket | Single-turn potentiometer | M4 X 2 | SM1 X 1 SM0.5 X 1 |
0dB | 10dB | 20dB | 30dB |
Gain (Hi-Z) | 1.51X10³V/A | Gain (Hi-Z) | 4.75X10³V/A | Gain (Hi-Z) | 1.5X10⁴V/A | Gain (Hi-Z) | 4.75X10⁴V/A |
Gain (50Ω) | 0.75X10³V/A | Gain (50Ω) | 2.38X10³V/A | Gain (50Ω) | 0.75X10⁴V/A | Gain (50Ω) | 2.38X10⁴V/A |
Bandwidth (BW) | 12MHz | Bandwidth (BW) | 1.6MHz | Bandwidth (BW) | 1MHz | Bandwidth (BW) | 260kHz |
Noise (RMS) | 258μV | Noise (RMS) | 192μV | Noise (RMS) | 207μV | Noise (RMS) | 211μV |
Signal bias | ±8mV(Typ.),±12mV(Max)
|
40dB | 50dB | 60dB | 70dB |
Gain (Hi-Z) | 1.51X10⁵V/A | Gain (Hi-Z) | 4.75X10⁵V/A | Gain (Hi-Z) | 1.5X10⁶V/A | Gain (Hi-Z) | 4.75X10⁶V/A |
Gain (50Ω) | 0.75X10⁵V/A | Gain (50Ω) | 2.38X10⁵V/A | Gain (50Ω) | 0.75X10⁶V/A | Gain (50Ω) | 2.38X10⁶V/A |
Bandwidth (BW) | 90KHz | Bandwidth (BW) | 28KHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | 214μV | Noise (RMS) | 234μV | Noise (RMS) | 277μV | Noise (RMS) | 388μV |
Signal bias | ±8mV(Typ.),±12mV(Max) |
Eight-level quantitatively adjustable gain parameters
Note：
● For a complete list of specifications and responsivity curves, see the APDxxxC Specs tab. Data valid at 23 ± 5 °C and 45% ± 15% relative humidity (noncondensing).
● Maximum gain set at peak response wavelength, 23 ± 5 °C temperature range
Spectral response curve
