特長
● AlGaInAs MQW(Multiple Quantum Well）
● Broad tuning range
● High output power
● Edge-emitting
● Low facet reflectivity
● C band coverage
電気・光学特性（E/O特性）
Electro-Optical Characteristics
Characteristics of RSOA chip:
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Beam Exit Angle | Θext | Tc=25℃&CW I=200mA | -- | 19.5 | -- | 。 |
Optical Output Power | P | Tc=25℃&CW I=200mA | 5 | 15 | -- | mW |
Series Resistance | Rs | Tc=25℃&CW I=200mA | -- | 2 | 4 | Ohm |
Forward Voltage | V | Tc=25℃&CW I=200mA |
| 1.3 | 2 | V |
Center wavelength | λ | Tc=25℃&CW I=200mA | -- | 1540 | -- | nm |
ASE bandwidth | Δλ | Tc=25℃&CW I=200mA@-3dB | 40 | 50 | -- | nm |
Angled Facet Reflectivity | R1 | -- | -- | 0.01 | -- | % |
R2 | -- | -- | 90 | -- | % |
Length | L | -- | -- | 1000 | -- | μm |
Farfield (Vertical) | θ v | Tc=25℃&CW I=200mA@R1 | -- | 19 | -- | 。 |
Farfield (Horizontal) | θ h | Tc=25℃&CW I=200mA@R1 | -- | 13 | -- | 。 |
Characteristics based on little external cavity reflectivity at 1550nm:
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Threshold Current | Ith | Tc=25℃&CW | -- | 20 | 40 | mA |
Wavelength Range | λp | Tc=25℃&CW | -- | 1550 | -- | nm |
Optical Output Power | P | Tc=25℃&CW I=200mA | 20 | 40 | -- | mW |
Series Resistance | Rs | Tc=25℃&CW I=200mA | -- | 2 | 4 | Ohm |
Side Mode Suppression Ratio | SMSR | Tc=25℃&CW I=200mA | -- | 50 | -- | dB |
Forward Voltage | V | Tc=25℃&CW I=200mA |
| 1.3 | 2 | V |
Typical Performance of RSOA Chip:
Absolute maximum ratings*：
Parameter | Symbol | Min. | Max. | Unit |
Operating Temperature | To | -5 | 85 | ℃ |
Storage Temperature | Ts | -40 | 100 | ℃ |
Forward current | If | -- | 500 | mA |
Reverse Voltage | VR | -- | 2 | V |
ESD(HBM) | ESD | -- | 500 | V |
*Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
**These maximum stresses are to be applied only after the chip is properly bonded to a heat sink. Applying current to a bare chip can damage the device.
外形図およびダイ寸法
Chip appearance and size (unit: mm):
Chip Dimensions (w*l*h) = 300±10μm*1000±20μm*100±10μm
ESD and EOS:
Switching transients can cause electrical overstress (EOS) damage in a chip.
EOS may result from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
Proper turn-on sequence:
a.All ground connections
b. Most negative supply
c. Most positive supply
d. All remaining connections Reverse order to turn-off.
Laser Safety:
Caution: Use of controls, adjustments and procedure other than those specified herein may result in hazardous laser radiation exposure.
応用 / 用途
● Gain medium for widely tunable external cavity semiconductor lasers
● Gain medium for narrow linewidth lasers
