特長
● Top illumination planar PD
● Narrow Element gap,
● Low Crosstalk,High reliability
● Good Reponsivity homogeneity of each Quadrant
電気・光学特性（E/O特性）
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameters | Symbol | Test Condition （TA=22℃±3℃） | Value | Unit |
Min | Max |
Response(AC)(Quadrant) | Spi | λ=1.064μm VR=135 V | Pulse Width 20 ns、Pin=2 mW | 0.25 | — | A/W |
Response(DC)(Quadrant) | Rei | DC、Pin=1μw | 0.30 | — |
Response variation (DC) (Quadrant)a Response variation (AC) (Quadrant)a | ΔRei | TA=-45 ℃±2 ℃ | — | 50 | % |
Dark Current(Quadrant) | IDi | VR=135V Pin=0μw | TA=22℃±3℃ | — | 1 | μA |
TA=70℃±3℃ | — | 10 |
Dark Current(RING) | ID | TA=22℃±3℃ | — | 10 |
TA=70℃±3℃ | — | 100 |
Junction capacitance（Quadrant） | Cji | VR=135V，f=1MHz | — | 15 | pF |
Active Area Diameter | φ |
| 10 | 16 | mm |
Equivalent noise power | NEPi | λ=1.064 μm，VR=135 V ,Pulse Width 20 ns | — | 5×10-12 | W/HZ1/2 |
Breakdown voltage（Quadrant、Ring） | VBR | IR=10μA | 200 | — | V |
Nonuniformity of sensitivity between pixels | Rf | λ=1.064 μm，VR=135 V ，Pulse Width 20 ns；Pin=2mW | — | 5 | % |
Nonuniformity of sensitivity in pixels | Rfn | λ=1.064 μm，VR=135 V ，Pulse Width20 ns；Pin=2mW | — | 5 | % |
Crosstalk Factor between pixels | SLi | λ=1.064 μm，VR=135 V ，Pulse Width 20 ns；Pin=2mW | — | 5 | % |
Typical characteristical curve
寸法およびピン定義
Dimension Outline
TO Type Full sealed design. Outline reference Figture1,Dimension Reference table1
Table 1, Dimension (Unit in mm)
SYB | φD1 | ΦD2 | ΦD3 | ΦD4 | ΦD5 | Φd | A | L1 | L2 | L3 | e |
Min | 30.55 | 27.80 | 3.00 | 27.915 | 22.60 | 0.98 | 7.03 | 3.02 | 1.85 | 2.70 | 18.00 |
Max | 30.65 | 28.00 | 3.06 | 27.94 | 23.40 | 1.02 | 7.20 | 3.10 | 1.95 | 3.00 | 18.05 |
PIN Output Array
Pin output array reference Figure 2,PIN Function Reference Table 2.
Table2,PIN Output Array function
PIN# | Function | Voltage polarity |
1 | Quadrant1 | + |
2 | Common P polarity | - |
3 | Quadrant4 | + |
4 | Ring | + |
5 | Quadrant3 | + |
6 | Cell | GND |
7 | Quadrant2 | + |
注文情報
PL-W□□□□-☆-QD▽-XX
□□□□: Cut off Wavelength
400: 400nm
900: 900nm
1100: 1100nm
2100: 2100nm
2400: 2400nm
2700: 2700nm
☆ : Material
IG: InGaAs
Si: Si
▽: Active Area(Single element)
10: 10mm
16: 16mm
XX: Package/Fiber and Connector Type
TO: TO Can Package
FSA=SMF-28E Fiber coupled+ FC/APC
FSP=SMF-28E Fiber coupled + FC/PC
FPP=PM Fiber Fiber coupled + FC/PC
FPA=PM Fiber Fiber coupled + FC/APC
User Safety
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.
