800〜1700 nm InGaAs 増幅型フォトディテクタ     


The InGaAs Amplified Photodetector has a photosensitivity range of 800nm~1700nm, fixed gain, and can achieve quantitative photoelectric conversion. It has sufficient gain while ensuring high bandwidth performance. It is suitable for the development of photoelectric detection applications with weak light intensity and fast speed. It has excellent performance and high cost performance, provides all-round technical support, and is often used in near-infrared light measurement.



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800–1700nm InGaAs 増幅型フォトディテクタ   [PDF]  [RFQ]

PDJAF8J5-S
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パラメータ


特長

● Sensing range of 800nm to 1700nm, often used in near-infrared light measurements

● Amplified detector, fixed gain, quantitative photoelectric conversion

● With sufficient gain

● At the same time, it guarantees high bandwidth performance and is suitable for the development of photoelectric detection applications with weak light intensity and fast speed

● Excellent performance, high cost performance, and comprehensive technical support

● Provide non-standard customization services

主要パラメータ

Parameters

Value

Wavelength range

800-1700nm

900-2600nm

Photosensitive size

Φ0.5mm

Φ150um

Φ0.5mm

Φ2.0mm

Φ1.0mm

Bandwidth range

DC~150MHz

DC~380MHz

DC~20MHz

DC~5MHz

DC~25MHz

Gain

Hi-Z Load:10kV/A;

50Ω Load:5kV/A

Hi-Z Load: 5×104V/A;

50Ω Load:2.5×104V/A

1×1011V/A±10%

Hi-Z Load:500kV/A;

50Ω Load: 175kV/A

Hi-Z Load: 1×104V/A;

50Ω Load:5×103V/A

Signal Amplitude

Hi-Z Load: 0~10V;

50Ω Load: 0~5V

Hi-Z Load: 0~10V;

50Ω Load: 0~5V

0~10V

Hi-Z Load:0~10V;

50Ω Load:0~3.5V

Hi-Z Load: 0~10V;

50Ω Load: 0~5V

NEP

1.2×10-11W/Hz1/2

1.0 × 10-13W/Hz1/2

2×10-14W/Hz1/2

2.2×10-11W/Hz1/2

1.1×10-11W/Hz1/2

Sensitive Surface depth

0.13" (3.3 mm)

0.16" (4.1 mm)

0.07" (1.8 mm)

0.15" (3.7 mm)

0.09" (2.2mm)

Operating temperature

10-40℃

10-50℃

Storage temperature

-20-70℃

-25-70℃

Detector Net Weight

0.10kg

0.06kg

0.10kg

Appearance Dimensions

2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)

2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)

2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm)

2.79" X 1.96" X 0.8" (70.9 mm X 49.9 mm X 22.5 mm)

2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)

Power Interface

Power supply

Power Switch

Signal Interface

Mounting Interface

Optical Interface

LUMBERG  R SMV3  FEMA LE

LDS12B(DP), ±12 VDC regulated linear power supply, 6W, 220VAC

Sliding Switch

With LED Indicator

BNC Female socket

M4×2

SM1× 1

SM0.5 × 1


Responsivity Curve

20250518-155005.png


Product Configurations:

20250518-155007.png


Attachment 1: Optional Configuration Table

Silicon-based amplified photodetector

Optional Configurations

Product Name

Material

Type

Features

Wavelength Range  Sensitive Area

Reserved Optional Configurations

PD: "Photodetector"

J: InGaAs

A: Amplified Type

F: Fixed gain

8J5:800-1700nm,Φ0.5mm

-s: 800-1700nm, Φ0.5mm for extremely weak light measurement





8J015:800-1700nm,Φ150um






8J20: 800-1700nm,Φ2.0mm






9O10:900-2600nm,Φ1.0mm



Attachment 2: Model and Part Number Cross-reference Table

Model

Part Number

Specs

PDJAF8J5

A80153440

800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 10kV/A, Bandwidth Range DC ~150MHz, Fast low-light measurement

PDJAF8J5-S

A80153441

800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 1x1011V/A±10%, Bandwidth Range DC ~20MHz, Extremely weak light measurement

PDJAF8J015

A80153442

800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ150mm, Fixed gain 5x104V/A, Bandwidth Range DC~380MHz, Fast low-light measurement

PDJAF8J20

A80153443

800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ2.0mm, Fixed gain 500kV/A , Bandwidth Range DC ~5MHz, Large target surface

PDJAF9O10

A80153444

900-2600nm InGaAs Amplified Photodetector, Photosensitive Area Φ1.0mm, Fixed gain 1x104V/A, Bandwidth Range DC ~25kHz, Infrared extension


寸法

Unit (mm)

20250518-155004.png

応用 / 用途

● Near-infrared light measurement

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