特長
● Vertical Cavity Surface-Emitting Laser
● Internal TEC and Thermistor, ESD protection
● Narrow linewidth
● 2 nm tunability with TEC
レーザー仕様
Condition:TO P = 20°C, IO P = 2.0 mA unless otherwise stated ( TO P = chip backside temperature, controlled by the TEC )
Parameters | Symbol | Min | Typ | Max | Unit | Remark |
Emission Wavelength | λR | Detail precision Wavelength Choose From Below Absorption Line |
Threshold current | ITH |
| 0.5 |
| mA |
|
Output Power | Popt | 0.25 | 0.5 | 0.7 | mW |
|
Threshold Voltage | UTH |
| 1.8 |
| V |
|
Driving Current | IOP |
|
| 2 | mA | Popt = 0.3 mW |
Laser voltage | UOP |
| 2 |
| V | Popt = 0.3 mW |
Electro optic conversion rate | ηWP |
| 12 |
| % | Popt = 0.3 mW |
Slope efficiency | ηS |
| 0.3 |
| W/A |
|
Differential series resistance | RS |
| 250 |
| Ω | Popt = 0.3 mW |
3dB bandwidth | ν3dB | 0.10 |
|
| GHz | Popt = 0.3 mW Due to ESD protection diode |
Relative intensity noise | RIN |
| -130 | -120 | dB/Hz | Popt = 0.3 mW @ 1 GHz |
Wavelength tuning over current |
|
| 0.6 |
| nm/mA |
|
Wavelength tuning over temperature |
|
| 0.06 |
| nm/K |
|
Thermal resistance (VCSEL chip) | Rthermal | 3 |
| 5 | K/mW |
|
Side mode supression |
| 25 |
|
| dB | I = 2 mA |
Beam divergence | θ | 10 |
| 25 | ° | Popt = 0.3 mW, full width 1/e2 |
Spectral Width |
|
| 100 |
| MHz | Popt = 0.3 mW |
Tec Characteristics | Unit | Min | Typ | Max | Remark |
Tec Current | mA | -150(Heating) |
| +300(Cooling) | Proper Heart Sink Required |
NTC Thermistor Resistance | KΩ | 9.5 | 10.0 | 10.5 | T=25℃@10 KΩ |
NTC Thermistor Resistance | KΩ | 10/exp{3892-(1/289K-I/TOP)} |
Spectrum
L-I Curve(T@25°C)
Wavelength tuning Range toward Temperature and Current
Oxygen Absorption line
Judging from Oxygen Absorption line we provide following high precision wavelength VCSEL Laser diode for your Choice:
High Precision Wavelength Selection Table |
Typ Emission Wavelength@Top=20 Iop=2mA | Final wavelength Tuned by TEC and Current |
760nm Absorption Line | min | max |
|
|
A Grade | 759.8 | 760.8 | 760.3 | 761.3 |
C Grade | 759.0 | 760.1 | 760.1 | 761.3 |
763nm Absorption Line |
A Grade | 762.5 | 763.5 | 763.0 | 764.0 |
C Grade | 761.9 | 764.9 | 763.0 | 764.8 |
寸法およびピン定義
Absolute Maximum Ratings
Item | Unit | Min | Typ | Max |
Store Temperature | ℃ | -40 | 25 | 125 |
Chip Temperature | ℃ | +10 | 25 | 40 |
Operating Current | mA | 0 | 2 | 3 |
Forward Voltage | V | 0.8 | 1.2 | 1.8 |
TEC Current | mA | -150 | - | +300 |
Soldering Temperature* | ℃ | 100 | 130 | 270 |
Electrical Power Dissipation | mw | - | - | 5 |
(*TEC temperature must be below 150°C)
応用 / 用途
● Tunable diode laser absorption spectroscopy
● Oxygen Monitoring
注文情報
PL-VCSEL-□□□□-☆-A8▽-TO39-XX
□□□□：Wavelength
0760:760nm
0763:763nm
Package:TO39
☆ ：TEC
0：Without TEC
1：With TEC
▽：Wavelength Tolerance
1：±0.5nm
2：±1.5nm
XX: Fiber and Connector Type
FS=Free Space
