Parameter

Min.

Typ.

Max.

Unit

Heatsink Temperature

20

25

30

°C

Forward Current*

800

mA

Optical Feedback**

20

%

*No self-lasing up to maximum current

** doesn't include coupling efficiency to chip.

Tunability Characteristics

Batch qualified @ CW, 25C, 800mA, external cavity in Littman configuration with 20% feedback

Parameter

Min.

Typ.

Max.

Unit

Wavelength of Maximum Power

1255

1270

1285

nm

Output Power @ 1270nm

150

210

mW

Central Wavelength of Tuning Range

1245

1260

1275

nm

Tuning Range Width (full)

60

nm

Side-Mode Suppression Ratio (SMSR) @ 1270nm

55

dB

Ampflified Spontaneous Emission (ASE) Characteristics

Tested for each sample @ CW, 25C, 800mA, without feedback

Parameter

Min.

Typ.

Max.

Unit

Output Power

20

mW

Forward Voltage

1.8

2

V

Mean Wavelength

1200

nm

Bandwidth (FWHM)*

20

nm

Fast Axis Beam Divergence (FWHM)

32

38

42

deg

Slow Axis Beam Divergence (FWHM)

5

7

11

deg

Polarization

TE

* Radiation coupled in single-mode fiber without lens and measured by OSA with 1 nm resolution.

Chip Parameters

Parameter

Min.

Typ.

Max.

Unit

Chip length

3

mm

Back-reflection from Front Facet

0.1

%

Back-reflection from Back Facet

90

99

%