Emission Wavelength

λ_R

Detail precision   Wavelength Choose From Below Absorption Line

Threshold current

I_TH

0.5

mA

Output Power

P_opt

0.25

mW

Threshold Voltage

U_TH

1.8

V

Driving Current

IOP

2

mA

Popt = 0.3 mW

Laser voltage

UOP

2

V

Popt = 0.3 mW

Electro optic conversion rate

ηWP

12

%

Popt = 0.3 mW

Slope efficiency

ηS

0.3

W/A

Differential series   resistance

RS

250

Ω

Popt = 0.3 mW

3dB bandwidth

ν3dB

0.10

GHz

Popt = 0.3 mW

Due to ESD protection   diode

Relative intensity   noise

RIN

-130

-120

dB/Hz

Popt = 0.3 mW @ 1   GHz

Wavelength tuning over   current

0.6

nm/mA

Thermal resistance   (VCSEL chip)

R_thermal

3

5

K/mW

Side mode supression

25

dB

I  = 2 mA

Beam divergence

θ

10

25

°

Popt = 0.3 mW, full   width 1/e2

Spectral Width

100

MHz

Popt = 0.3 mW

1

LD-

2

LD+

Store Temperature

-40

25

125

Chip Temperature

℃

+10

25

40

Operating Current

mA

0

2

2.5

Forward Voltage

V

0.8

1.2

1.8

Soldering Temperature*

℃

100

130

270

Electrical Power Dissipation

mw

-

-

5