Wavelength range

500-1700nm

900-1700nm

800-1700nm

900-2600nm

Photosensitive size

Φ 1.0mm

Φ1.0mm

Φ2.0mm

Φ0.5mm

Φ1.0mm

Bandwidth range

70MHz

35MHz

11.7MHz

20.6MHz

14MHZ

Rise time (@50Q)

5ns

10ns

30ns

17ns

25ns

NEP

2.0x10^-14W/Hz^1/2

2.5x10^-14W/Hz^1/2

1.3x10^-13W/Hz^1/2

1.0x10^-12W/Hz^1/2

1.5x10^-12W/Hz^1/2

Dark current

1.5nA(Typ.)/10nA(Max)

1.0nA(Typ.)/25nA(Max)

1.0nA(Typ.)/25nA(Max)

2uA(Typ.)/20uA(Max)

5uA(Typ.)/40uA(Max)

Junction capacitance

50pF(TyP.)

80pF(TyP.)

80pF(TyP.)

140pF(TyP.)

500pF(TyP.)

Bias voltage

5V

1.8V

Output current

0~5mA

Output voltage

~9V(Hi-Z);

~170 mV(50Ω)

Photosensitive surface depth

0.09"(2.2 mm)

Operating temperature

10-50°C

Storage temperature

-20-70°C

Detector net weight

0.10kg

Undervoltage index

Vout   ≤9V(Hi-Z) Vout ≤170mV(502)

Appearance size

2.79X1.96"X0.89"(70.9   mmX49.8 mm X 22.5 mm)

Power supply battery

Power   switch

Signal   interface

Battery   monitoring

Strut   interface

Optical   interface

A23, 12VDC, 40mAh

Slide   switch

BNC   female socket

Momentary   push button

M4X2

SM1 X1

SM0.5 x 1

Product Name

Material

Type

Feature

Wavelength   range

Active   Area

Reserve Optional configuration

PD:" Photodetector"

J: InGaAs

B: Bias type

C: Conventional type

5110:500-1700nm, φ1.0mm

9N10:900-1700nm, φ1.0mm

8J20:800-1700nm, φ2.0mm

905:900-2600nm, φ0.5mm

9010:900-2600nm, φ1.0mm