特長
● Low dependence of electrical and optical characteristics over temperature
● Data rates from OC-3 to OC-48
● Lower Power Consumption
電気・光学特性（E/O特性）
Condition:TO P = 20°C, IO P = 10.0 mA unless otherwise stated (TO P = chip backside temperature, controlled by the TEC)
Wavelength | 1310nm +/-10nm |
Wavelength Tuning Range | 4 nm |
Threshold Current | 2 mA typ. |
Laser Linewidth | 0.1 nm |
Forward Voltage | 3 V |
Series Resistance | 100 Ω typ. |
Output Power | 0.5 mW typ. |
Side Mode Suppression | 35 dB typ. |
Rise and Fall Time | 100 ps typ. |
Monitor Current | 0.1 mA typ. |
Modulation Bandwidth | 3 GHz typ |
Spectrum
L-I Curve(T@25°C)
Temperature / wavelength tuning over TEC current*
注文情報
PL-VCSEL-W□□□□-☆-A8▽-XXXX
□□□□: Wavelength
0760: 760nm
0795: 794.7nm
*****
1310: 1310nm
☆ : TEC
0: Without TEC
1: With TEC
▽: Wavelength Tolerance
1: ±10nm
2: ±1.5nm
XXXX: Package
CPSA=Coaxial Package with SM1310+ FC/APC
CPSP=Coaxial Package with SM1310+ FC/PC
CPPP=Coaxial Package with PM Fiber+ FC/PC
CPPA=Coaxial Package with PM Fiber+ FC/APC
User Safety
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can't be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.
