特長
● TO46 package with metal housing
● Suitable for high - speed gating mode (≥100MHz) and free - running mode applications
● High detection efficiency (>20% @ afterpulse probability below 2%)
● Low dark count rate at high temperature (optimal<2kHz @ 20% detection efficiency @ 0℃ @ 100MHz)
電気・光学特性（E/O特性）
Parameter/Symbol | Test Condition | Minimum | Maximum | Unit |
DC Characteristics Tc=23±2℃ | Breakdown Voltage，Vbr | Id=10μA | 50 | 80 | V |
Responsivity，Re | λ=1.55μm, Vr=Vbr－2V, Φe=1μW | 8 |
| A/W |
Dark Current，Id | Vr=Vbr－2V, Φe=0μW |
| 1 | nA |
Capacitance，Ctot | Vr=Vbr－2V, f=1MHz |
| 0.25 | pF |
Breakdown Voltage Temperature Coefficient，η | Top = ﹣40~﹢30℃, I=10μA, Φe=0 |
| 0.15 | V/℃ |
Geiger Characteristics Top=0℃ | Photon Detection Efficiency，PDE | 0.1ph/pulse, λ=1.55μm | 20 |
| % |
Normalized Dark Count Rate*，DCR | fg=100MHz, PDE=20% |
| 10 | kHz |
Afterpulse Probability，APP | fg=100MHz, PDE=20% |
| 2.5 | % |
Typical Curves：
Absolute Maximum Ratings：
Items | Parameter/Symbol | Rating |
Absolute Maximum Ratings | Storage Temperature，Tstg | ﹣50℃~﹢85℃ |
(Operating) Ambient Temperature，Tc | ﹣50℃~﹢80℃ |
Soldering Temperature，Tsld（time） | 260℃（10s） |
DC Reverse Bias Voltage，Vr | Vbr |
Overbias Pulse Amplitude，Vg | 10V |
Input Optical Power，Φe（continuous） | 1mW |
Forward Current，If（continuous） | 1mA |
Electrostatic Discharge Susceptibility，ESD | ≥300V |
寸法およびピン定義
Mechanical Dimension &Pin Layout：
Note：Spherical Lensφ 2mm， Refractive Indexnd=2.0，TransmittanceT≥98% @1260~1650nm.
The product complies with the relevant requirements of GJB8119-2013 General Specification for Semiconductor Optoelectronic Devices
応用 / 用途
● Quantum secure communication
● Weak light detection
● Laser ranging
● Biomedical
