仕様
Characteristics (Tc=25℃, except in special cases)
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
Wavelength | λ | 920 | - | 1650 | nm | - |
Responsivity | R | 0.85 | - | - | A/W | 1310nm, 1µw, Vr= -5V |
Breakdown Voltage | Vbr | 30 | - | - | V | Ir= -10uA |
Dark Current | Id | - | - | 5 | nA | Vr= -5V |
Capacitance | C | - | - | 6 | pF | Vr= -5V, 1MHz |
Absolute Maximum Rating
Use beyond this specification will cause permanent damage to or affect the long-term reliability of the photodiode chip. Long-term exposure to maximum rating conditions will also have an adversely effect on chip reliability.
Parameter | Symbol | Units | Min | Max |
Storage Temperature | Ts | °C | -40 | 125 |
Operating Temperature | To | °C | -40 | 85 |
Forward Current | If | mA | - | 10 |
Reverse Current | If | mA | - | -10 |
Reverse Voltage | Vr | V | - | -20 |
Electro Static Discharge | ESD | V | 500 | - |
寸法
Length*Width* Height = 280µm(L)*280µm(W)*150µm(H) Tolerance：±15µm
Notice
● Unpacked chips are electrostatic sensitive devices, take anti-electrostatic measures to avoid damage is needed.
● Indium phosphide devices are fragile materials. Do not use tweezers, do use flat head vacuum nozzle.
● Photosensitive window should not be touched.
● ESD and EOS information:
● The instantaneous impact of current or voltage will cause the chip to be damaged by excessive stress. And also may result from insufficient anti-static measures, improper power sequencing, a faulty power supply or an intermittent connection.
● The correct power-on sequence is as follows:
1. All ground wire connections;
2. Negative voltage connections;
3. Forward voltage connections;
4. Other connections;
● The power-off sequence is the reverse of the power-on sequence.
