400〜1700 nm InGaAs 増幅型フォトディテクタ(可変利得)     


Our InGaAs detectors have a sensitivity range of 400~1700nm and are commonly used for visible light and near-infrared light measurement. They are amplified detectors with 8 levels of adjustable gain and quantitative photoelectric conversion. They have a wide dynamic range and are suitable for various optoelectronic development scenarios and are widely used. They have excellent performance, high cost performance, and comprehensive technical support. We also provide non-standard customized services.



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400~1700nm InGaAs 増幅型、ゲイン調整可能   [PDF]  [RFQ]

InGaAs-0.4/1.7um-1x1mm-AG8
(Stock NO. Not entered)
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パラメータ


特長

● InGaAs detector, with a sensitivity range of 400nm~1700nm, is commonly used for near-infrared light measurement;

● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion;

● Wide dynamic range, suitable for various photoelectric development scenarios, widely used;

● Excellent performance, high cost performance, all-round technical support;

● Provide non-standard customized services.

仕様

Specification

PN#

InGaAs-0.4/1.7um-1X1mm-AG8

InGaAs-0.4/1.7um-2X2mm-AG8

Spectrum response range

400~1700nm

Response time constant

5ns

35ns

Gain

Hi-Z load: 1.51kV/A~4.75 MV/A; 50Ω load: 0.75kV/A~2.38 MV/A

Signal amplitude

Hi-Z load: 0~10V; 50Ω load: 0~5V

Gain adjustment method

Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total.   Bandwidth is inversely proportional to gain.

NEP

1.4X10-12W/Hz1/2

5.2X10-13W/Hz1/2

Active area

1mm x 1mm

2mm x 2mm

Photosensitive surface depth

0.13" (3.3 mm)

Detector net weight

0.10kg

Operating temperature

10~40℃

Storage temperature

-20~70℃

Appearance size

2.79" x 2.07" x 0.89" (70.9 mm x 52.5 mm x 22.5 mm)

Power supply interface

Power switch

Signal interface

Gain adjustment

Support rod interface

Optical interface

LUMBERG

RSMV3 FEMALE

Slide switch with LED indicator

BNC female socket

8-position knob

M4 x 2

SM1 x 1

SM0.5 x 1


Eight-level quantitatively adjustable gain parameters

0dB

10dB

20dB

30dB

Gain (Hi-Z)

1.51X103V/A

Gain (Hi-Z)

4.75X103V/A

Gain (Hi-Z)

1.5X104V/A

Gain (Hi-Z)

4.75X104V/A

Gain (50Ω)

0.75X103V/A

Gain (50Ω)

2.38X103V/A

Gain (50Ω)

0.75X104V/A

Gain (50Ω)

2.38X104V/A

Bandwidth (BW)

13MHz

Bandwidth (BW)

1.7MHz

Bandwidth (BW)

1.1MHz

Bandwidth (BW)

300kHz

Noise (RMS)

≤250μV

Noise (RMS)

≤250μV

Noise (RMS)

≤250μV

Noise (RMS)

≤250μV

40dB

50dB

60dB

70dB

Gain (Hi-Z)

1.51X105V/A

Gain (Hi-Z)

4.75X105V/A

Gain (Hi-Z)

1.5X106V/A

Gain (Hi-Z)

4.75X106V/A

Gain (50Ω)

0.75X105V/A

Gain (50Ω)

2.38X105V/A

Gain (50Ω)

0.75X106V/A

Gain (50Ω)

2.38X106V/A

Bandwidth (BW)

90kHz

Bandwidth (BW)

28kHz

Bandwidth (BW)

9kHz

Bandwidth (BW)

3kHz

Noise   (RMS)

≤250μV

Noise   (RMS)

≤250μV

Noise   (RMS)

≤300μV

Noise   (RMS)

≤400μV

Signal bias

±8mV(Typ.) ,±12mV(Max)


Spectral response curve

t22.1.png


Product Configuration

t22.3.png

応用 / 用途

● Monitor the output of Q-switched lasers

● Monitor the output of mode-locked lasers

注文情報

PN#

Spectrum response range

Active area

Gain range

Characteristic

InGaAs-0.4/1.7um-1X1mm-AG8

 

400~ 1700nm

1mm X 1mm

0~70dB  Eight-speed quantitative adjustable gain

Covering visible to infrared dual bands

InGaAs-0.4/1.7um-2X2mm-AG8

2mm X 2mm

Large target area


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