1 mm 900–2700 nm 2段TEC、TO-8パッケージ InGaAsフォトダイオード     


GESTIN-2TE-TO8 series unit InGaAs detector is mainly composed of P-I-N structure InGaAs photosensitive chip, transition electrode plate, temperature sensor and Two Stage thermoelectric cooler (2TE), in the form of TO package. This user manual only describes the product series.



製品 モデル


ネーム モデル 価額
Φ3000 µm InGaAs フォトダイオード   [PDF]  [RFQ]

GESTIN-2TE-TO8-3000
Stock NO.: E80043285
[お問い合わせください]
Φ2000 µm InGaAs フォトダイオード   [PDF]  [RFQ]

GESTIN-2TE-TO8-2000
Stock NO.: E80043286
[お問い合わせください]
Φ1000 µm InGaAs フォトダイオード   [PDF]  [RFQ]

GESTIN-2TE-TO8-1000
Stock NO.: E80040367
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Φ500 µm InGaAs フォトダイオード   [PDF]  [RFQ]

GESTIN-2TE-TO8-0500
(Stock NO. Not entered)
[お問い合わせください]
φ300 µm InGaAs フォトダイオード   [PDF]  [RFQ]

GESTIN-2TE-TO8-0300
(Stock NO. Not entered)
[お問い合わせください]

パラメータ


特長

● Chip active diameters from 300μm to 3000 μm 

● Spectral response from 900nm to 2700 nm 

● High shunt resistance for high sensitivity 

● TEC Built Inside 

電気・光学特性(E/O特性)

Structure Parameters

Part Number

Package

Cooling

Active Area

Chip size

Electrode   Size

GESTIN-2TE-TO8-0300

TO-8

2TE

Φ300μm

850×850um

140×180um

GESTIN-2TE-TO8-0500

Φ500μm

1000×1000um

140×180um

GESTIN-2TE-TO8-1000

Φ1000μm

1410×1410um

140×180um

GESTIN-2TE-TO8-2000

Φ2000μm

2560×2560um

280×360um

GESTIN-2TE-TO8-3000

Φ3000μm

3560×3560um

320×480um


EO Parameters

Part Number

Test Temp   Tch(℃)

Spectral λ   (nm)

Dark   Current ID(μA)

Junction Capacity   C(f=1MHzVR=0V) (pF)

VR=0.01V

VR=0.5V

GESTIN-2TE-TO8-0300

25

900-2700

0.1

0.5

50

GESTIN-2TE-TO8-0500

0.2

1

100

GESTIN-2TE-TO8-1000

1

4

300

GESTIN-2TE-TO8-2000

4

10

800

GESTIN-2TE-TO8-3000

10

40

2000


Response Cure

P2.png

TEC Parameters

Operating Environment

Parameter

Typ

Operating temperature(℃)

-45~+55

Storage temperature(℃)

-50~+60

 

Characteristics of thermoelectric coolers

The detector integrates a two-stage thermoelectric cooler (TEC), and the center of the cooling surface is the center of the lower surface of the detector, and the cooling area should be ≥6mm×6mm, and its performance parameters are shown in the following table:

Performance   index

Value

Maximum   thermal load powerQmax/W

0.93W

Maximum load current allowedITEC-max/A

1A

The maximum   load voltage allowedVTEC-max/V

2V

 

Temperature monitoring module characteristics

This detector uses the thermistor as the temperature monitoring module. The mapping between the resistance value and the temperature in the working temperature is shown in the following table:

Temperature(℃)

ResistancekΩ)

Temperature(℃)

ResistancekΩ)

-65

94.270

-15

6.909

-60

69.290

-10

5.587

-55

51.500

-5

4.549

-50

38.700

0

3.729

-45

29.400

5

3.075

-40

22.560

10

2.55

-35

17.490

15

2.126

-30

13.690

20

1.782

-25

10.810

25

1.5

-20

8.608

30

1.268

 

The corresponding relationship between thermistor value and temperature is as follows:

P3.png

T1:Test target temperature, unit: ℃;

T2:Reference point temperature, unit: ℃, The typical value of the reference temperature within -20~70℃ is 10 or 40℃, and the reference temperature close to the target temperature should be selected.

R1:T1 corresponding thermistor resistance value, unit: kΩ;

R2:T2 corresponding thermistor resistance value, unit: kΩ;

B:T2 corresponding thermistor resistance value, unit: kΩ;

B:Between-20~70deg,the typical B value is 3019.6±60.

Notice:

a) During TEC installation, pay attention to the new resistance introduced by the external electrical structure. If the new resistance exceeds

When TEC resistance is 10%, the I-V curve needs to be recalibrated.

b) It is recommended to switch on TEC in a way with small connection resistance. If welding is required, short circuit is required

Grounding protection, welding temperature ≤250℃, welding duration < 10s;


寸法およびピン定義

P4.png

応用 / 用途

● NIR senGESTINg/radiometry

● LED/LD characterization

● Spectroscopy

● Medical diagnostics

● Spectroscopy

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