Φ16 µm ゲイガーモードAPD小型アレイチップ(4 × 4 または 8 × 8アレイ)     


InGaAs and InGaAsP single-photon avalanche diode (SPAD) chips with 4×4 and 8×8 array specifications are dedicated chips for short-wave infrared single-photon detection, counting and imaging. In the Geiger working mode, each pixel of the chip operates independently and freely, and is mainly used to detect weak light signals in the near-infrared band range of 0.9~1.7μm and 0.95~1.25μm.



製品 モデル


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1550 nm 4×4 ゲイガーモードAPD小型アレイチップ   [PDF]  [RFQ]

A4P50F-1550
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パラメータ


特長

● Spectral response band 0.9~1.7μm and 0.95~1.25μm are optional

● Pixels run independently and freely

● Pixel can detect weak photon signals

● High detection efficiency

電気・光学特性(E/O特性)

Parameter/Symbol

Test Condition

Min.

Max.

Unit

Unit DC

Characteristics

Tc=23±2℃

Breakdown VoltageVbr

Id=10μA

50

80

V

ResponsivityRe

λ=1.55μm/1.06μm, Vr=Vbr2V, Φe=1μW

7.5


A/W

Dark CurrentId

Vr=Vbr2V, Φe=0μW


1

nA

CapacitanceCtot

Vr=Vbr2V, f=1MHz


0.25

pF

Temperature Coefficient of   Breakdown Voltageη

Top = 40~30℃, I=10μA, Φe=0


0.15

V/℃

Breakdown Voltage ConsistencyΔVbr

Id=10μA


0.05

V


Parameter/Symbol

Test Condition

Chip Module

A4P50F-1550

A4P50F-1064

A4(8)P100F-1550

A4(8)P100F-1064

Unit Geiger characteristic

Top=20

Photon detection efficiencyPDE

0.1ph/pulse,

λ=Response peak wavelength

≥ 20%

Normalized dark count rate*DCR

fg=100MHz, PDE=20%

≤ 10kHz

≤ 5kHz

≤ 10kHz

≤ 5kHz

Afterpulse probabilityAPP

fg=100MHz, PDE=20%

≤ 2.5%

≤ 2%

≤ 2.5%

≤ 2%

Crosstalk probabilityPxt

fg=100MHz, PDE=20%

≤ 20%

≤ 10%

*Supports customization for special applications:DCR<1kHz @0℃ or APP<0.5% @0℃


Absolute Maximum Ratings

Items

Parameter/Symbol

rated value

Absolute maximum rating

storage temperature,Tstg

﹣50℃~﹢85℃

(operating) ambient temperature,Tc

﹣50℃~﹢80℃

Solder temperature,Tsld(Time)

260℃(10s)

DC reverse bias voltage,Vr

Vbr

Overbias Pulse Amplitude,Vg

10V

Input optical power,Φe(Continuous )

1mW

Forward current,If(Continuous )

1mA

Electrostatic Discharge Sensitivity,ESD

≥300V


Chip Structure

Chip Module

A4P50F-1550/-1064

A4P100F-1550/-1064

A8P100F-1550/-1064

Array size

4×4

8×8

pixel size

50μm×50μm

100μm×100μm

100μm×100μm

Active area size

Φ16μm

外形図およびダイ寸法

Unit: μm


121212.jpg

Schematic diagram of the structure of the 50μm pixel pitch 4×4 array chip A4P50F


1313.jpg

Schematic diagram of the 100μm pixel pitch 4×4 array chip A4P100F



1414.jpg

Schematic diagram of the structure of the 8×8 array chip A8P100F with a pixel pitch of 100 μm 

Quality reliability:  The product meets the requirements of Telcordia-GR-468-CORE for product reliability.

応用 / 用途

● Range measurement through fog, haze, smoke and dust

● Near infrared laser warning

● Long-distance light ranging

● Long distance space laser communication

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