Operating Wavelength 1310nm, Active Area Diameter 20μm, Reponsivity ≥0.76 A/W@1.55μm, 3 dB Bandwidth (50Ω TIA) 24GHz, MOQ:20 PCs
| 型番 : APC-1310-1x4-100 |
| 価格 : USD [お問い合わせください] |
| 納期 : [お問い合わせください] |
| 在庫数量 : [お問い合わせください] |
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This product is a 1310nm 100Gb/s InGaAs 1×4 array photodetector chip that performs photoelectric conversion and is suitable for applications in data communication, microwave photonics, and related fields.
Test conditions: 25 °C, unless otherwise specified
Parameters | Symbol | Test condition | Min | Typ | Max | Unit |
Operating Temperature | T0 | 0 | 75 | ℃ | ||
Storage Temperature | Ts | -40 | 85 | ℃ | ||
Operating Wavelength | λ | 1310 | nm | |||
Bias Voltage | Vb | 3 | 6 | V | ||
Active Area Diameter | Ф | 20 | μm | |||
Responsivity | R | λ = 1550 nm, Vb= 3 V | 0.76 | A/W | ||
Dark Current | Id | Vb= 3 V | 0.2 | 1.0 | nA | |
Capacitance | C | Vb= 3 V | 80 | fF | ||
Series Resistance | Rs | 10 | Ω | |||
3 dB Bandwidth (50Ω Load) | BW | Ps,o = 0 dBm, Vb= 3 V | 24 | GHz |