Response wavelngth 900-1650nm, responsivity: 0.9A/W@1.31µm or 0.95A/W@1.55µm, Material InGaAs/InP, Active area Diameter 15mm, Die Package, (Min Order:100PCS)
| 型番 : LP-PD-D15 |
| 価格 : USD [お問い合わせください] |
| 納期 : 在庫あり |
| 在庫数量 : [お問い合わせください] |
| 在庫番号 : 2 |
| メールでお問い合わせくださいお見積り依頼(RFQ) |
LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ5mm、φ10mm、φ15mm respectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.
Parameters (Tc=25℃)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Response range | λ | 900 | 1650 | nm | ||
Responsivity | R | 0.85 | 0.9 | A/W | λ = 1310 nm | |
0.95 | λ = 1550 nm | |||||
0.2 | λ = 850 nm | |||||
Dark current | I_D | 40 | 150 | nA | V_R = -2 V | |
Capacitance | C | 60 | nF | V_R = -2 V, f = 1 MHz |
Absolute Maximum Ratings
PARAMETER | SYMBOL | VALUE | UNIT |
Reverse voltage | VRmax | 5 | V |
Forward current | — | 10 | mA |
Operating temperature | Topr | -40 to +85 | ℃ |
Storage temperature | Tstg | -55 to +125 | ℃ |