Response wavelngth 840-910nm, Active area diameter 32µm, Bandwidth 34GHz, Material InGaAs, Responsivity 0.55A/W@850nm or 0.65A/W@910nm
| 型番 : LP-PD5032 |
| 価格 : USD [お問い合わせください] |
| 納期 : [お問い合わせください] |
| 在庫数量 : [お問い合わせください] |
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LP-PD5032 56Gbaud High-Speed PIN Photodiode ChipThe LP-PD5032 is a high-performance 850-910nm PIN photodiode chip designed to meet the rigorous demands of next-generation optical communications. Featuring a specialized GSG (Ground-Signal-Ground) electrode structure and a 32um active area, this chip is optimized for high-speed data transmission with minimal signal interference.